Department of Physics Seminar Series

Novel Defect Analysis Methods for High-NA EUV Lithography Semiconductor Devices

Anthony R. Davis, M.S.E.E.

High-NA EUV (Numerical Aperture Extreme Ultraviolet) lithography represents the next major inflection in semiconductor chip scaling, enabling sub-10 nm patterning but introducing new classes of stochastic and process-driven defects that challenge both silicon wafer yield and semiconductor chip performance.

This talk provides an accessible overview of common micro and nanoscale defects that can impact silicon wafer quality. This work will also explore emerging defect-analysis strategies such as advanced optical and e-beam inspection workflows, data-driven classification approaches and applications of emerging technologies created using EUV lithography.